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SemiAnalysis · · 35 分钟

第040期 - ASML正在研发混合键合设备,我们找到了相关专利(AI供应链)

Jordan NanosHowieSherry Zhang

半导体技术
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TL;DR
  • ASML尚未公布的混合键合设备,将把其前道工艺的精度优势带入由Besi等贴装专业厂商主导的市场。这一判断基于2025年的专利申请,设备部署还要“数年之后”。芯粒在准备和测量过程中始终放在传送载具上;ASML采取“让晶圆去找芯片”(the wafer to the die)的方式,在键合间距不断缩小之际发挥其计量和晶圆台优势。
  • 传送带设计能否实现量产良率,以及能否整合供应商,是ASML面临的关键执行问题。键合需要六轴对准和无颗粒表面;一个污染物就可能撑开更大一片区域。Howie质疑移动中的测量头如何保持精度,以及数米长的轨道如何保持洁净;Sherry称相关要求“几乎相当于前道工艺”。
  • 嘉宾认为,HBM芯粒到晶圆混合键合在2029年前不会落地,甚至未必会落地。在所述725微米厚度限制内,最理想情况下容量可能提升50%,但加工成本也更高;客户提出的需求反而是,在既定带宽和性能下减少层数。Howie对HBM的结论是“投资回报不划算”;逻辑芯片更能体现其效率优势,关键在于连接更短、更密。
  • 中国的逻辑折叠路线图,为混合键合设备带来了另一类需求。Howie以一款华为手机及其分区设计为例,称其频率可达2.7 GHz;此外,路线图还瞄准了全混合键合的数据中心加速器,甚至计划到2030年实现3层堆叠。相关良率下降意味着“要用更多设备,才能得到同样的良品产出”,体现了中国在工艺受限下继续推进扩产的努力。
  • 技术路径分化最明显的证据,已经体现在芯片设计上。Howie对比了AMD的缓存堆叠与华为将核心内部组件分布到不同层的做法。Sherry认为,国内化正从政府主导转向晶圆厂与供应商协作;出口管制“可能加速”这一进程,但她没有预测政策走向。
  • 更大的High-NA掩模版将恢复完整曝光场面积,并支持ASML提高设备售价。计划在2030年前后采用的6×12英寸掩模版,旨在突破目前约400 mm²的半场限制,恢复至850 mm²;这要求掩模版生产、防尘膜、检测和搬运环节同步调整。Sherry将吞吐量提升与ASML的“基于价值的定价”联系起来;要实现这一收益,整个供应链必须协同推进。
摘要 · 为研究而整理的核心内容

1. ASML的专利勾勒出一种不同的混合键合设备

  • Howie说,线索来自Lithos Crafty在Twitter上的提示,以及2025年的专利申请;这款尚未公布的设备距离部署还有“数年”。Sherry认为,有理由相信ASML正在同时推进晶圆对晶圆键合(连接整片晶圆)和芯粒对晶圆键合(逐颗放置芯片)。后者相关专利更多,而目前缺少既成熟、又能同时满足精度和吞吐量要求的设备。Sherry称Besi在芯粒对晶圆键合领域领先;晶圆对晶圆键合的参与者更多,包括EVG、ASML和PDN,不过目前仍由国际老牌厂商主导。
  • Besi和ASMPT等现有厂商采用机械臂拾取芯粒、完成对准,再将其放到静止的基底晶圆上。Howie强调,放置时不会施加压力;之后通过退火完成键合。
  • ASML提出的传送带方案可能由初创公司SuperTrak供应轨道系统:每颗芯粒从测量到等离子体活化、再到键合,全程留在同一个载具上。各个工位靠近芯粒作业;最后由晶圆上升,与芯粒接合。Howie将这一方式概括为“让晶圆去找芯片”(the wafer to the die),借助ASML在计量和晶圆台搬运方面的优势。
  • 随着键合间距缩小,芯粒之间每平方毫米要容纳更多信号。Howie认为,ASML现有的亚纳米级套刻能力,能带来高出一个数量级的精度优势;难点在于把这项能力应用到一种陌生的键合架构中。

2. HBM混合键合的经济性不如逻辑芯片

  • Howie认为,逻辑芯片是混合键合的主要应用场景:把功能单元分到2层,可以缩短通信路径,并容纳比模块并排布局更多的连线。其回报是更高的能效,并能在受限面积内更有效地利用硅片。
  • 对HBM而言,主要收益是在所述725微米厚度限制内提高密度:混合键合在最佳情况下可能让容量增加50%。散热收益有限;Howie认为信号完整性或许也有所改善,但成本高于回流焊或热压键合。客户实际提出的需求,是在给定带宽和性能下减少层数:“投资回报不划算。”
  • Sherry提到,他们对4层堆叠HBM做过经济性分析,也研究了其中的精度和吞吐量难题。他们的判断是,2029年前不会出现HBM芯粒对晶圆混合键合,即使最终会出现也未可知。Howie的原则是:“如果不必用混合键合,就不该用。”
  • Jordan以ASML 2024年的路线图追问这一时间判断;该路线图显示,NAND和DRAM都将采用混合键合。Howie提醒,ASML有动机给出乐观预测,因为它希望卖出更多设备。他还提到High-NA的密度预测——每平方毫米3亿、4亿和5亿个晶体管——并称这些目标至今仍远未实现:看待这类预测“要打个折扣”。

3. 良率取决于六轴对准和洁净无尘的轨道

  • Howie将套刻和洁净度问题分开讨论。计量系统必须确定芯粒在载具上的位置和晶圆的位置,再沿6个自由度进行补偿,包括X/Y位移、旋转和倾斜,随后沿垂直方向将两个表面贴合。
  • 键合从介电氧化物接触开始;之后加热,使铜膨胀并填入剩余间隙。颗粒可能抬起周围硅片,“形成楔形”,导致整片区域失效,而不只是一个连接点。Howie强调,芯粒必须在各工位之间保持洁净。
  • Sherry称,混合键合的良率要求“几乎相当于前道工艺”。Howie提出的未解问题包括:测量头移动时如何维持精度、如何控制覆盖数平方米的轨道上的污染,以及如何整合非标工位。ASML可能需要与前处理设备供应商共同设计。Howie认为ASML可以自行负责计量,但也追问设备移动时要如何保持测量精度。

4. 中国的逻辑折叠增加需求,也改变芯片设计

  • Howie以华为C2手机为例,称其搭载“9050”芯片,是首款采用混合键合的手机。把SRAM移到下层芯粒后,速度敏感型单元可以靠得更近,从而减少延迟和拥塞;他说,这种设计无需提高电压或功耗,频率就能达到2.7 GHz。让更多硅面积在更低电压下运行,是其基本能效逻辑;折叠设计则进一步带来密集的垂直连接。
  • 中国的路线图瞄准在2030年前让数据中心加速器实现完整的“逻辑折叠”,键合间距比TSMC的SoIC更小,甚至计划到2030年实现3层堆叠。Howie说,良率下降意味着“要用更多设备,才能得到同样的良品产出”。Sherry还提到,NAURA和AMEC正通过收购或投资扩展能力。
  • Jordan问,地缘政治是否会催生彼此分离的晶圆厂设备体系。Howie表示,EDA领域已经出现分化:AMD的SoIC方案将核心与L3 SRAM分开;华为及其设计合作方则把乘法器、时序中继单元和缓冲器等核心内部模块拆分到不同层。他将自己的回答限定在设计层面。
  • Sherry表示:“我们并不擅长预测政策走向。”她观察到,从“今年开始”,国内自给自足的推进方式正从政府主导,转向晶圆厂、设备厂商和EDA供应商之间的协同。她认为,出口管制等政策不会影响这项努力,反而可能因提高本土化激励而加速推进。

5. 更大的High-NA掩模版恢复曝光场面积,并支撑定价

  • Jordan提到ASML与TSMC、IFS和Samsung共同开发更大的High-NA光掩模版。Howie解释,沿一个方向缩小8×、另一个方向缩小4×,会使掩模版曝光场面积减半,将芯片面积限制在约400 mm²,而目前为850 mm²。过渡方案会预留拼接区域,或使用非High-NA层来跨越边界连接。
  • 计划在2030年前后采用的6×12英寸掩模版,将恢复完整曝光场并提高吞吐量。Howie说,其长边实际上约为11.2英寸,“差不多这个数”,因此能适配现有的FOUP和顶部搬运设备。更大的规格可以让设计人员摆脱半场限制。
  • 这一变化会涉及掩模版生产、载具、防尘膜、电子束检测和修复。Howie将所需的协同程度比作2000年代初从8英寸晶圆转向12英寸晶圆。Sherry将吞吐量提升与ASML的“基于价值的定价”联系起来:管理层表示,生产率提高可以支撑更高的设备售价,因此生态系统的转型关系到设备长期单机收入。
完整逐字稿
Howie

We traveled back to Portland to tear down this phone.

Jordan Nanos

Yeah.

Howie

We brought one sample back to Singapore for testing.

Jordan Nanos

What do you mean? You’re going to plug it in in Singapore?

Howie

Yeah, and do benchmarks on it. This Huawei phone opens up.

Jordan Nanos

Are you then going to plug a SIM card in it and do some qualitative testing as well?

Howie

Yeah, maybe. After that, we might sell it.

Jordan Nanos

Yes.

Howie

Or if the teardown team needs another sample, in case anything goes wrong, this is a backup.

Jordan Nanos

You keep the backup teardown in your back pocket?

Hello, everyone. Welcome back to SemiAnalysis Weekly. This is Jordan. I’m here with Howie and Sherry. And in this episode, we’re going to be talking through an article that was just put out called “ASML Is Building a Hybrid Bonding Tool.” Big news. It hasn’t been announced yet, but we’ve got the patent filings, we’ve made some annotations, and we’re going to talk to the experts. So, guys, welcome to the show. Excited for this one.

Howie

Yeah, thanks for having us on.

Sherry Zhang

Thanks, Jordan.

Jordan Nanos

Okay, so take me through it. When did you guys first discover this, and what were the initial conversations about as you were getting ready to write this article?

Howie

The main thing was a tip-off from this great guy on Twitter called Lithos Crafty. He made a great series of tweets. I’m not sure how he found the patent, but it’s been there for a while, actually, this 2025 patent. It shows a specific and unique strategy for integrating ASML’s strengths and applying them to hybrid bonding.

From there, we did a bit more research into the startup SuperTrak, which is engineering this conveyor system. Then we dug in and compared the differences. It’s definitely not going to happen anytime soon, right? It’s several years out, but it’s at least worth discussing because it’s very different from all the current tools out there.

Sherry Zhang

Yes. In fact, we started looking into this a long time ago. There was an advanced packaging series that Dylan and other teammates wrote back in 2023 or even earlier. We started focusing on this area a long time ago, which is why any news in this segment interests us.

Jordan Nanos

Makes sense. What’s the high-level difference? Maybe some people listening don’t understand hybrid bonding. Can you give us a high-level introduction, and then we can talk about the specifics?

Howie

On a very high level, a traditional tool from companies like Besi for a die-to-wafer system, which is what this is going to be, uses a static wafer as the base wafer. In hybrid bonding, for example, you have a top die and a bottom die. The base wafer is the target, and a pick-and-place machine takes the chiplets for the top die, aligns them, and places them onto the base wafer to make sure they’re properly aligned.

Before that, there are several preparation and measurement steps to make sure everything is aligned. After that, there are other steps for hybrid bonding, such as annealing and processing. Those won’t be covered here, but the main tool we’re talking about is the pick-and-place tool.

What ASML is doing differently with this patent is trying to integrate some of the metrology features into a conveyor-belt system. Instead of the dies being picked and placed onto a wafer, they go around a carousel on a track, passing through various stations for measurement and plasma activation. Finally, they go down to the bonding station, where the wafer comes up toward the die and meets it at the carousel. That’s where the bonding happens.

With this specific method, ASML can use several of its competencies in measurement metrology and wafer-stage handling. The wafer moves toward the die rather than the die moving toward the wafer. That’s the main difference.

Jordan Nanos

Makes sense. You speculate that they could be building a wafer-to-wafer hybrid bonding tool as well. Can you describe the difference between die-to-wafer and wafer-to-wafer?

Howie

Sherry, do you want to take that?

Sherry Zhang

Sure. Wafer-to-wafer is basically bonding 2 wafers together, whereas with die-to-wafer, as Howie described, you first have a die and then put it on the wafer. Die-to-wafer is more challenging than wafer-to-wafer because there’s a higher requirement for alignment. Also, right now we lack mature tools that can meet both the accuracy and throughput we need.

Based on the patent filings, there are reasons to believe ASML is building both, but there are more patents about the die-to-wafer tool they’re building. We believe that when ASML enters a market, given its competitive positioning in lithography, it aims to be the most advanced and the best. That’s why we think they could be building both, but the patent filings suggest they’re moving ahead with die-to-wafer.

Jordan Nanos

Okay. Can you tell me a little bit about what the existing tools are? You mentioned Besi, for example. It won’t just be ASML building a hybrid bonding tool, right?

Howie

That’s right. The current state of the art is from companies like Besi and ASMPT, among others. They come from a pick-and-place background. What they used to do well, and what they still do very well, is pick and place individual, small chiplets.

The placement arm—the mechanical arm with stepper-motor controls and things like that—is very good at achieving the overlay from the die onto the base wafer and then placing it down. It doesn’t use any force; it just places the die onto the bond pads. The bonding step comes later, when you do the anneal. That’s the current technology and state of the art.

However, ASML is coming from a different place: the front end. Its tools are regularly used for sub-nanometer alignment and overlay. When you’re trying to manufacture intricate transistors or do lithography patterning, you need extremely fine-grained control. It’s easily an order of magnitude higher precision.

From ASML’s perspective, if it already has this capability, why not find a way to implement it for hybrid bonding, especially now that hybrid bonding is moving to finer and finer pitches? The hybrid-bond pitch—how many signals you can get per square millimeter going between the 2 dies—is becoming more and more important. By coming at it from a front-end perspective, ASML doesn’t have issues with overlay. Its challenge is how to implement its capabilities in a system that can bring the dies to the wafer or, in this case, the wafer to the die. It’s a pretty novel solution, and we also discussed some of the challenges they might face compared with current technologies.

Jordan Nanos

Yeah. But let me take a step back. You guys mentioned this article at the beginning, right? This was February 2024, so coming up on 3 years ago. In the description of this article, you’re talking through exactly what hybrid bonding is and discussing AMD 3D V-Cache. Obviously, now, if I go back to the present day, there’s a claim in here that HBM will not adopt die-to-wafer hybrid bonding before 2029, if at all. Can you talk about the implications of hybrid bonding, where you think it’s going to fit in, and the reasoning behind that?

Howie

I would say the primary purpose of hybrid bonding is for logic. It allows you to partition the IP—all your different functional units—into 2 separate layers. Putting signal wires between the units to communicate is a much shorter distance if you place them above each other, and you can have many more wires. If you place them next to each other, you’ll have some kind of limit on your data fabric: how quickly or efficiently one segment can talk to another.

I have an example right here. This is the Huawei C2 phone, and inside is the 9050 chip. It’s the first mobile phone to use hybrid bonding and 2 separate wafers, 2 layers, to split the IP and get the most out of the process technology they have. A case in point is logic: power efficiency and increasing the effective area budget in the limited size of a phone. That’s the main use case we see so far.

On the memory side, the claims about using hybrid bonding for HBM are primarily about packaging. It’s about how many layers of memory you can stack into a given maximum thickness, because a silicon wafer has a maximum thickness of 725 microns, slightly less than 1 millimeter.

Howie

And people want more and more capacity, right? So if I use hybrid bonding, maybe I can have 50% more gigabytes of HBM stacked in the best-case scenario. Memory vendors have been putting a lot of R&D and marketing into hybrid bonding. But the ROI isn’t there because, fundamentally, hybrid bonding is a much more expensive process to implement than traditional reflow or thermal compression bonding (TCB), which is what they are currently using for HBM.

There’s a small benefit to thermal performance and perhaps to signal integrity. However, the main thing is just to get the density up. Right now, that is not the priority of most AI labs or most HBM requests. We have been asking, and the memory vendors have received a lot of requests to reduce the number of layers for a given performance and bandwidth. So this is currently pushing back the need for that many layers. If you don’t have to use hybrid bonding, then you shouldn’t. That’s why we’re also making the claim that it isn’t going to come anytime soon in high volume for HBM. It will mostly be for logic.

Jordan Nanos

Sherry, do you agree with all that? Does that make sense?

Sherry Zhang

Yeah. I think what Howie mentioned—and, in fact, we have written a detailed article about the HBM spec. In that, we have run through the economics of whether it makes sense to continue stacking more, or for the time being, use what we have right now: 4-high. If you read through that, you also get more color on why there’s a delay with HBM right now.

On top of that, what we just mentioned about die-to-wafer hybrid bonding being more challenging in terms of the accuracy it requires and the throughput—all these factors combined lead to the delay that we believe will happen. That’s why our timeline for adoption is 2029 or beyond.

Jordan Nanos

Yeah. This is quite a big difference. It’s not like all adoption of new tools in the fabs has come quickly or on time in the past. But just looking at this ASML roadmap, which was published in 2024 and which you guys cite in the article, there’s a lot of “hybrid, hybrid, hybrid, hybrid, hybrid” across NAND and DRAM.

Howie

And of course, ASML likes to have an optimistic prediction of technology and computation because they want to sell more tools. They want extra complexity, right? I remember very famously that they had a transistor-density metric and a graph showing High-NA adoption, and the density numbers were totally off the charts: 300, 400, 500 million transistors per square millimeter, which is nowhere near what we even have to this day. So, do take those with a pinch of salt.

Jordan Nanos

Makes sense. Okay, so maybe we can dig into the actual tool itself and what’s so unique about it. I can start by throwing the patent diagram you guys annotated back on screen. Maybe you can talk through a little bit of this.

Sherry Zhang

I’ll start, but then I’ll let Howie continue, because I still remember the day we were looking at the graph and how you were describing how the track runs through. There’s also an important part of the ecosystem change that’s needed, and I’ll let Howie review that.

What’s really unique is that normally what we see on the market right now are chamber tools, which means the tools don’t move; the dies move to different stations and get processed. But, as you pointed out here, the unique thing about this tool is that, when we read the filings and patents and look at what ASML draws, it should be running on a track. They’ve named SuperTrack Conveyance as a company or potential supplier to provide the track.

The fundamental difference, as we pointed out, is that for a BESI-type tool, the die is prepared elsewhere, and the bond head picks up the tool and puts it at the stations for final placement. But in ASML’s design, the die sits on its own holder and stays there as it moves through different stations. It only leaves at the bonding step. I’ll let Howie describe the other parts of the track and other tools that could potentially be interesting or challenging.

Howie

The super interesting part here is that the die isn’t moving from the conveyor belt. The die stays on the conveyor belt. How the die gets onto the carrier doesn’t matter too much, because the subsequent stations will measure how the die is oriented on the carrier and make a compensation later, at the bonding step.

The main difference here is that each tool function—each so-called chamber—has to physically come down and approach the die. Even during bonding, the wafer has to come and approach the die on the carrier. Everything has to come to the die in question: the small chiplets.

How do you design a system where your normal metrology, your measurement tools, now need to operate in a moving scenario? They have to come down to engage with the die and the conveyor system. This is going to be pretty interesting to see how they implement it. Of course, it’s a nonstandard form factor. You’ll need some kind of co-design agreements with several companies that do the pre-bonding phase so they can integrate their functionality into this track system.

Of course, ASML could do everything themselves, especially on the metrology side. They shouldn’t have a problem there. But the challenge is: how do you maintain measurement accuracy when the tools themselves start moving to approach the die? That’s going to be a big question.

Another question is how you maintain cleanliness over such a huge surface area. Imagine your current tools. Although this isn’t the kind of clean room used for front-end transistor formation—not that level of cleanliness—even so, how do you make sure that when the die moves between the different stations, the track, which spans several meters and several square meters of area, isn’t exposed? How are they going to contain it as the die moves between the tools and as the chamber comes down to approach the die? How does it handle the air and the environment? That’s going to be a very interesting question.

Jordan Nanos

Yeah. The critical thing you guys pointed out in the article is that a single particle between two wafers can unbond the area and result in a defective bond. You specify alignment accuracy and cleanliness. Can you distinguish between the two and explain how they might both come into play? Then maybe later we can talk about why ASML is set to benefit, because they have some experience keeping things clean.

Howie

Yep. The two major things are alignment and cleanliness. For alignment, you have to measure where the bond pads are relative to where you expected them to be, then make the relevant changes to the positioning. When the wafer approaches the die, you want it to compensate for any deviations—not just in the X/Y position, but also along the rotational axis and even out of plane. The die might be slightly tilted to one side, at an angle. So we’re talking about six degrees of freedom in terms of how the die can be aligned.

That comes under the purview of having structures on the die that you can measure. Then you know the die’s specific orientation on the carrier, on the conveyor belt. On the wafer, you need to know the position of the grid lines of all the different dies relative to 3D space. When you bring the two together, you have to make sure they come together vertically and are aligned on the XY plane. That is the main goal of alignment accuracy: like overlay, and then you can bring the two surfaces into contact.

The second thing is cleanliness. Hybrid bonding requires extremely flat surfaces, and they have to be free of particles because the bonding is oxide bonding from the dielectric, followed by an anneal where it gets heated and baked. Then the copper expands and fills the remaining gap. If you have any particles in between, it won’t just affect the bond in that area. The silicon will lift up and cause a defect across the whole area. It’s almost like forming a wedge: when you have an impurity, the whole surface can’t bond properly because something is in the way.

Making sure that when it’s clean at one station, by the time it arrives at the next station, it’s still clean is very important.

Sherry Zhang

The alignment, accuracy, and cleanliness basically determine the bonding yield, which is very important because, ultimately, when we use the tool, we want it to have good yield and generate good throughput. Those high requirements also make hybrid bonding almost a front-end process, which is why we’re seeing more and more front-end tool makers. It’s not just ASML. Hybrid bonding matters globally, but it matters even more for China, since they’re leveraging hybrid bonding and advanced packaging as alternative ways to shrink.

We’re also seeing major Chinese semicap companies move into hybrid bonding or grow their advanced-packaging tool capabilities. NAURA and AMEC have both made moves by acquiring or investing to build those capabilities.

Jordan Nanos

Can you explain that a little more? What do you mean when you say hybrid bonding can take the place of shrinking logic nodes? You don’t need high-NA tools or EUV if you’re—Here, Howie’s holding up the Huawei phone again. If you’re going to build a phone like that, with hybrid bonding you can still make it perform better.

Howie

The main thing is that, given their limitations in process technology and what’s available to them, they have to ask: How do you maximize performance? How do you keep increasing performance per watt? One very easy way to do that is to make the die bigger: use more silicon, run it at a lower voltage and lower power. That’s a very naive way to look at it, but having more silicon available can help increase power efficiency.

Hybrid bonding is a better version of that because the 2 layers of silicon are right next to each other, with a lot of wires connecting them. Given the limitations on the process technology they can apply, hybrid bonding and advanced packaging are another avenue for them to continue scaling. That’s why there’s a lot of demand in China.

Jordan Nanos

Okay. Maybe we can go a little more technical. Why exactly do you think hybrid bonding allows them to improve performance per watt or performance per square millimeter?

Howie

A key example Huawei has given, which we also see in this phone, is that you’re able to split certain components, certain functional units within the core. For example, you can place the components that require high speed closer together, so there’s less timing delay and less congestion when they communicate with each other.

They’re able to be placed closer together because other noncritical components, like SRAM or memory cells, can be placed on the bottom die, on a different layer, and are out of the way. That puts the important components closer together and can, for example, improve the clock speed. They get up to 2.7 GHz without increasing the voltage or power.

In a general sense, just having more silicon and more area budget for a given power envelope usually gives you slightly higher power efficiency for the same architecture. Running more silicon at a lower voltage means less leakage, so less power is wasted transmitting signals from one end to the other. That’s why hybrid bonding helps in this sense.

Jordan Nanos

Makes sense. Sherry, can you explain a little about the implications for China that you’re referring to? Does this imply that a hybrid bonding tool wouldn’t be subject to export controls, or that you think it’s within the scope of what a Chinese tool maker would be able to produce themselves?

Sherry Zhang

What we’ve seen, as we also mentioned in the article, is that BESI is the leader in die-to-wafer bonding. For wafer-to-wafer bonding, there are more players, like EVG, ASML, and PDN, but international incumbents still dominate the field for now.

We’re seeing China’s major semicap companies grow their capabilities. We believe, as with other tools, that geopolitical complexities could drive the need or motivation to develop homegrown tools. China is always motivated to build its own supply chain, which is why we’re seeing more initiatives by Chinese tool makers to grow these capabilities.

Howie

You can see it in the roadmaps, too, in how aggressively they’re implementing hybrid bonding. Look at the data center side: they’re working very hard to overcome power-density limitations. They want to implement hybrid bonding and have what they call “logic folding”—a full hybrid-bonded design for data center accelerators by 2030.

We’re talking about much higher densities than TSMC’s SoIC, in terms of bond pitch. Given the demand and their process limitations, they’re looking not just at the current 2 layers, but even 3 layers by 2030. That would reduce yield further, which means you need more tools to get the same yielded output. There’s a lot of demand in this area.

Jordan Nanos

Okay. Something you mentioned in passing in the article caught my eye: the joint initiatives between ASML and TSMC, IFS, and Samsung to move from 6-inch to 12-inch photomasks for High-NA EUV tools. Can you give me the high-level implications? This isn’t coming soon, but it seems like it would allow similar improvements, such as increasing die size.

Howie

The main limitation of High-NA is that your reticle size is cut in half because the anamorphic lens squeezes the mask pattern 8 times in one dimension, but only 4 times in the other. That leaves you with a maximum die size of around 400 square millimeters, versus about 850 square millimeters currently.

To get a full-reticle-size design, you can use a modified kind of stitching. IMEC and ASML talk about delineating a specific region in your floor plan, in your chip design, where you know there’s going to be some stitching. You can either use other layers—non-High-NA layers—to do the stitching, or dedicate a specific area to it.

That’s what will happen in the interim. Then, in the 2030 timeframe, we’re looking at a 6-by-12-inch mask. The mask is now double the length in one dimension, so when it’s reduced 8 times in one direction and 4 times in the other, you get back the full reticle. That eases a lot of the headaches and improves throughput even more. ASML is focused on high-productivity tools, and this extends that approach: you get the full mask size on High-NA, freeing up the design and allowing higher throughput with the full reticle.

Sherry Zhang

One point is the ecosystem. This has implications for the entire ecosystem, because it’s not just ASML or the mask makers that have to change; it’s the entire supply chain. That’s why this takes time. ASML also took time to work with the fabs to get this started, given the complexities of the supply chain.

The second point Howie touched on is throughput, which is very important for ASML. Management mentioned on a recent earnings call that its pricing is basically value-based. As throughput increases, that also drives up pricing, which will be beneficial for them longer term.

Jordan Nanos

Interesting. Makes sense. Can you dig one layer deeper into the supply chain implications? Maybe you covered it in the research and shouldn’t talk about it now—in that case, excuse the question. But if not, at a high level, what’s technically changing in the supply chain that you think would have implications?

Howie

The main thing is that the entire mask inspection, production, and protection with the pellicles all need to be updated to fit this larger 6-by-12-inch mask. A little fun fact: it’s not actually 12 inches; it’s about 11.2 inches or something like that, so the mask blank fits in the current FOUPs and overhead material-handling systems. But it’s still large enough to fit the larger mask pattern.

Howie

That’s just one example. All your carriers—how do you carry the mask? Then there are your pellicles. If you have a double-size mask area, all your e-beam metrology and inspection, and mask repair, are going to be even more complex. The whole industry needs to agree on how we’re going to approach this larger mask size.

It’s very akin to wafers going from 8-inch to 12-inch back in the early 2000s. We’re looking at the whole industry needing to move together, and that’s why you need this kind of early commitment from all the foundries and ASML to ensure everyone is coming up to speed in the supply chain.

Jordan Nanos

It does make me think a little bit about what you were talking about earlier: China could be more aggressive in going for hybrid bonding and building an ecosystem around that, which could create even more of a split, where ASML and the foundries that run their tools end up pushing further on High-NA and making some decisions there. But then you mentioned that you get the reticle size back, and I’m wondering if somehow they wrap around to the same thing for chip designers, where designs used on one can now be more transferable to another stack of tools in some way. I assume that’s probably not the case.

Anyway, give me your high-level reaction to that. Do you think we should expect, with more export controls and all the geopolitics at play, that there will effectively be 2 separate tool stacks to build a fab on going forward? There’ll be one side pushing on hybrid bonding and the other side pushing on larger photomasks and continuing to shrink everything?

Howie

I would already say that that’s happening on the EDA side, on the chip-design side. The way you design a chip with multiple layers and partition which block should go where is something that everyone else hasn’t really had to deal with. China is pushing very hard on this, so Huawei has teamed up with several design companies to integrate and do the partitioning for the different functional groups.

On everyone else’s part, AMD is the original user of this SoIC hybrid bonding, but its partitioning is a lot simpler. It’s just looking at the L3 caches, SRAM, and so on. The split line between the different layers is also very distinct: the CPU cores go on one layer, and the memory goes on another. Whereas in the logic-folding hybrid bonding case, within the core you have all these little functions—for example, multipliers, timing relays, and buffers. All the small components that make up the core are being partitioned across the 2 layers.

This kind of very advanced design flow is already happening. This split is between the current Western EDA tools, which have never needed to do this in the first place, and the tools China has started developing on its own. I can at least speak to the design side, but Sherry can speak a bit more about the supply chain and manufacturing side.

Sherry Zhang

In terms of the supply chain, we’ve talked about how there are multiple drivers for China to build its own supply chain or try to accelerate it as much as possible. We’re not experts at predicting what the policies could be, but what we’re seeing on the ground in China is that the companies themselves are driving this. Starting from this year, the domestic sufficiency initiative, which used to be state-led, is moving toward a stage where it’s more coordinated among the toolmakers and the fabs themselves.

They’re working together to design and build the tools, semiconductor capital equipment, and EDA. What China needs could be different from what the rest of the world needs, given some of the constraints it faces. We believe that process and effort won’t be affected by policies such as export controls. In fact, as we’ve seen with China’s semiconductor-capital-equipment localization rate over the past few years, export controls could accelerate that, push them, or increase their motivation to work harder on it. That’s what we’re seeing right now.

Jordan Nanos

Makes sense, guys. I’m roughly out of questions. Maybe the only thing left that jumps to mind is what’s left for ASML to prove as it develops the hybrid bonding tool. We know you kept that behind the paywall, so we’ll skip it for now and say anybody interested in answering that question should subscribe to the research, check out the wafer fab equipment model, and reach out and let us know if they have any comments about this. Any final thoughts before we wrap up?

Howie

Yeah, I’m looking forward to our teardown of this.

Jordan Nanos

Teardown of the Huawei phone. Let’s go. We published some good stuff previously on both of those, Intel and Huawei process, which is awesome. Sherry, anything from you?

Sherry Zhang

I think it’s always great to work with great colleagues like Howie and Jordan, because every day I feel like the learning curve is 90 degrees here. I hope our readers also enjoy the technical part of our research. We’ll do more and update you again on ASML or other parts of the supply chain.

Jordan Nanos

Awesome. Nice job, guys. Thanks for joining today.